Material proposal for 2D indium oxide
نویسندگان
چکیده
Realization of semiconductor materials at the two-dimensional (2D) limit can elicit exceptional and diversified performance exercising transformative influence on modern technology. We report experimental evidence for formation conceptually new 2D indium oxide (InO) its material characteristics. The InO was harvested through targeted intercalation (In) atoms deposition kinetics graphene/SiC interface using a robust metal organic chemical vapor (MOCVD) process. A distinct structural configuration two sub-layers In in “atop” positions imaged by scanning transmission electron microscopy (STEM). bonding oxygen to indicated energy loss spectroscopy (EELS). wide bandgap measuring value 4.1 eV estimated conductive atomic force measurements (C-AFM) InO.
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ژورنال
عنوان ژورنال: Applied Surface Science
سال: 2021
ISSN: ['1873-5584', '0169-4332']
DOI: https://doi.org/10.1016/j.apsusc.2021.149275